Indium Phosphide

Indium Phosphide Description

Indium phosphide (InP) yog binary semiconductor tsim los ntawm indium thiab phosphorus. Nws muaj lub ntsej muag-centered cubic ("zincblende") siv lead ua qauv, zoo ib yam li GaAs thiab feem ntau ntawm III-V semiconductors.

InP tuaj yeem npaj los ntawm cov tshuaj tiv thaiv dawb phosphorus thiab indium iodide ntawm 400 degree, kuj los ntawm kev sib xyaw ua ke ntawm cov khoom huv huv ntawm qhov kub thiab txias, lossis los ntawm thermal decomposition ntawm kev sib xyaw ntawm trialkyl indium compound thiab phosphine.

InP yog siv nyob rau hauv high-power thiab high-frequency electronics vim hais tias ntawm nws superior electron tshaj tawm nrog rau kev hwm rau ntau dua semiconductors silicon thiab gallium arsenide. Nws muaj qhov ncaj bandgap, ua rau nws muaj txiaj ntsig zoo rau optoelectronics li zoo li laser diodes. InP kuj tseem siv los ua substrate rau cov khoom siv optoelectronic raws li epitaxial indium gallium arsenide.

Indium Phosphide Daim Ntawv Thov thiab Lwm Yam Kev Lag Luam

● Optoelectronic Cheebtsam

● Kev kub ceev hluav taws xob

● Photovoltaics

● Ceramics

● Hnub Ci Zog

● Kev Tshawb Fawb & Kev Tshawb Fawb

Chemical Identifiers

Indium Phosphide Properties (Theoretical)

Cim npe nrov: indium phosphide, Tuam Tshoj, lwm tus neeg, yuav, muag, ua nyob rau hauv Suav teb